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Fizika Tverdogo Tela, 2017 Volume 59, Issue 9, Pages 1684–1690 (Mi ftt9451)

Semiconductors

Polarization effects in quantum-well In$_{28}$Ga$_{72}$As/GaAs heterolasers

L. A. Kulakova, A. V. Lyutetskiy, I. S. Tarasov

Ioffe Institute, St. Petersburg

Abstract: The effect of externally introduced variable strains on the polarization properties of quantum-well In$_{28}$Ga$_{72}$As/GaAs laser radiation at room temperature is studied experimentally and theoretically. An analysis of the polarization effects at various values of the excess of the working current over the threshold is performed. Data on the energy for the splitting of the levels of light and heavy holes in the quantum well of the structure under consideration are obtained. It is experimentally proven that the effectiveness of the action of a variable strain on the polarization twist substantially increases with increasing quantum well width.

Received: 25.02.2016
Revised: 20.03.2017

DOI: 10.21883/FTT.2017.09.44837.062x


 English version:
Physics of the Solid State, 2017, 59:9, 1706–1712

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© Steklov Math. Inst. of RAS, 2024