Transfilm passivation of a silicon–ytterbium nanofilms interface with chemisorbed CO and O$_{2}$ molecules

Passivation of a silicon–ytterbium nanofilm interface with СО and O$_{2}$ molecules chemisorbed on the opposite side of films is studied. The transfilm inhibition of silicides is found to be caused by the Coulomb interactions between the localized electrons forming the donor–acceptor bonding of molecules with films and the conductivity electrons of ytterbium (6$s$-band). This interaction increases the energy of the chemisorbed molecules–ytterbium films system. At a given amount of chemisorbed molecules this increase is higher for the thinner rather than thicker films. This correlation with the film thickness favors the lack of chemical interaction between silicon and ytterbium, when СО and О$_2$ molecules are chemisorbed on the nanofilm surface.