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Fizika Tverdogo Tela, 2017 Volume 59, Issue 4, Pages 668–678 (Mi ftt9604)

This article is cited in 2 papers

Semiconductors

Anisotropy of the mean free paths of phonons in single-crystal films of germanium, silicon, and diamond at low temperatures

I. I. Kuleyev

Institute of Metal Physics, Ural Division of the Russian Academy of Sciences, Ekaterinburg

Abstract: The physical aspects of the influence of the elastic energy anisotropy of crystals on the anisotropy of the mean free paths of phonons in single-crystal films of germanium, silicon, and diamond in the diffuse scattering of phonons at the boundaries of the samples have been considered. It has been shown that, for sufficiently wide films of germanium, silicon, and diamond with the $\{100\}$ and $\{111\}$ orientations and the lengths of less than or equal to their width, the phonon mean free paths are isotropic (independent of the direction of the temperature gradient in the plane of the film). The anisotropy of the phonon mean free paths depends primarily on the orientation of the film plane and is determined by the focusing and defocusing of phonon modes. For single-crystal films of germanium, silicon, and diamond with the $\{100\}$ and $\{111\}$ orientations and lengths much larger than their width, the phonon mean free paths are anisotropic.

Received: 13.07.2016

DOI: 10.21883/FTT.2017.04.44267.294


 English version:
Physics of the Solid State, 2017, 59:4, 682–693

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