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Fizika Tverdogo Tela, 2017 Volume 59, Issue 1, Pages 30–35 (Mi ftt9702)

This article is cited in 6 papers

Semiconductors

Evolution of the symmetry of intermediate phases and their phonon spectra during the topochemical conversion of silicon into silicon carbide

Yu. È. Kitaevab, S. A. Kukushkinbcd, A. V. Osipovbc

a Ioffe Institute, St. Petersburg
b Institute of Problems of Mechanical Engineering, Russian Academy of Sciences, St. Petersburg
c St. Petersburg National Research University of Information Technologies, Mechanics and Optics
d Peter the Great St. Petersburg Polytechnic University

Abstract: A symmetry analysis of the crystal structure and the phonon spectrum during continuous topochemical conversion of silicon into silicon carbide has been carried out. The transformation of the symmetry of phonons at high-symmetry points of the Brillouin zone upon the transition from the initial cubic structure of silicon (diamond) through an intermediate cubic structure of silicon carbide to the trigonal structure of SiC has been determined. The selection rules for the infrared and Raman spectra of all the three phases under investigation have been established.

Received: 29.06.2016

DOI: 10.21883/FTT.2017.01.43946.267


 English version:
Physics of the Solid State, 2017, 59:1, 28–33

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© Steklov Math. Inst. of RAS, 2024