Abstract:
This paper presents the results of the investigation of the energy spectrum of electronic states due to trapping centers, the role of which in CuInAsS$_3$ is played by lattice defects. The results of the analysis of the thermally stimulated current curves of CuInAsS$_3$ demonstrate that the energy spectrum of trapping centers is localized under the bottom of the conduction band in the energy range $E_C$–(0.14–0.35) eV.