Yu. A. Danilov, H. Boudinov, O. V. Vikhrova, A. V. Zdoroveyshchev, A. V. Kudrin, S. A. Pavlov, A. E. Parafin, E. A. Pitirimova, R. R. Yakubov, “Formation of the single-phase ferromagnetic semiconductor (Ga,Mn)As by pulsed laser annealing”, Fizika Tverdogo Tela, 2016, Volume 58, Issue 11,Pages <nobr>2140

This article is cited in 4 papers

XX International Symposium ''Nanophysics and Nanoelectronics'', Nizhny Novgorod, March 14-18, 2016
Magnetism

Formation of the single-phase ferromagnetic semiconductor (Ga,Mn)As by pulsed laser annealing

Yu. A. Danilov^abc, H. Boudinov^c, O. V. Vikhrova^b, A. V. Zdoroveyshchev^b, A. V. Kudrin^ab, S. A. Pavlov^d, A. E. Parafin^ad, E. A. Pitirimova^a, R. R. Yakubov^a

^a Lobachevsky State University of Nizhny Novgorod
^b Scientific-Research Physicotechnical Institute at the Nizhnii Novgorod State University, Nizhnii Novgorod
^c Institute of Physics, Universidade Federal do Rio Grande do Sul, Porto Alegre, Brazil
^d Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod

Abstract: It is shown that (Ga,Mn)As layers formed by Mn$^+$ ion implantation into GaAs and subsequent annealing by an excimer laser pulse with an energy density to 200–300 mJ/cm$^2$ feature the properties of the $p$-type semiconductor and ferromagnetic properties. The threshold dose of implanted ions ($\sim$10$^{15}$ cm$^{-2}$) for activating Mn acceptors is determined. The sheet hole concentration and the Curie temperature increase with further increasing Mn$^+$ ion dose. Hysteresis loops in the magnetic field dependences of the Hall effect, the negative magnetoresistance, and magnetic and structural studies suggest that the layers are analogues of single-phase ferromagnetic compounds (Ga,Mn)As formed by low-temperature molecular beam epitaxy.