A. M. Lugovykh, T. B. Charikova, V. I. Okulov, K. D. Moiseev, Yu. A. Kudriavtsev, “Charge transfer features and ferromagnetic order in semiconductor heterostructures <nobr>$\delta$</nobr>-doped with manganese”, Fizika Tverdogo Tela, 2016, Volume 58, Issue 11,Pages <nobr>2160

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XX International Symposium ''Nanophysics and Nanoelectronics'', Nizhny Novgorod, March 14-18, 2016
Magnetism

Charge transfer features and ferromagnetic order in semiconductor heterostructures $\delta$-doped with manganese

A. M. Lugovykh^a, T. B. Charikova^ab, V. I. Okulov^ab, K. D. Moiseev^c, Yu. A. Kudriavtsev^d

^a Institute of Metal Physics, Ural Division of the Russian Academy of Sciences, Ekaterinburg
^b Ural Federal University named after the First President of Russia B. N. Yeltsin, Ekaterinburg
^c Ioffe Institute, St. Petersburg
^d National Polytechnical Institute, (Cinvestav-IPN), Mexico

Abstract: The temperature and field dependences of the specific magnetization and magnetoresistance in heterostructures with a GaAs/GaAs/Ga$_{0.84}$In$_{0.16}$As/GaAs quantum well and a $\delta$-layer of atomic Mn in the barrier layer near the quantum well filled with holes are studied. A change in the resistance and magnetization behavior upon ordering of localized magnetic moments in the cap layer due to a change in the manganese ion distribution topology is detected.