A. A. Toropov, E. A. Shevchenko, T. V. Shubina, V. N. Zhmerik, D. V. Nechaev, G. Pozina, S. V. Ivanov, “AlGaN nanostructures with extremely high quantum yield at 300 K”, Fizika Tverdogo Tela, 2016, Volume 58, Issue 11,Pages <nobr>2180

XX International Symposium ''Nanophysics and Nanoelectronics'', Nizhny Novgorod, March 14-18, 2016
Low Dimension Systems

AlGaN nanostructures with extremely high quantum yield at 300 K

A. A. Toropov^a, E. A. Shevchenko^a, T. V. Shubina^a, V. N. Zhmerik^a, D. V. Nechaev^a, G. Pozina^b, S. V. Ivanov^a

^a Ioffe Institute, St. Petersburg
^b Linköping University, Department of Physics, Chemistry and Biology, Sweden

Abstract: Theoretical optimization of a quantum well heterostructure based on AlGaN solid solutions is implemented in order to attain the maximum charge carrier activation energy and the maximum exciton binding energy at a radiation wavelength of $\sim$300 nm. An optimized structure sample with the radiative recombination dominating over the temperature range of 5 to 300 K and the room temperature internal quantum yield as high as 80% of the value measured at 5 K has been manufactured via plasma-assisted molecular beam epitaxy.