E. I. Malysheva, M. V. Dorokhin, A. V. Zdoroveyshchev, M. V. Ved, “Tunneling and injection in ferromagnetic structures InGaAs/GaAs/(Ga,Mn)As and InGaAs/<nobr>$n^{+}$</nobr>-GaAs/(Ga,Mn)As”, Fizika Tverdogo Tela, 2016, Volume 58, Issue 11,Pages <nobr>2190

This article is cited in 4 papers

XX International Symposium ''Nanophysics and Nanoelectronics'', Nizhny Novgorod, March 14-18, 2016
Surface Physics and Thin Films

Tunneling and injection in ferromagnetic structures InGaAs/GaAs/(Ga,Mn)As and InGaAs/$n^{+}$-GaAs/(Ga,Mn)As

E. I. Malysheva^a, M. V. Dorokhin^a, A. V. Zdoroveyshchev^a, M. V. Ved^b

^a Scientific-Research Physicotechnical Institute at the Nizhnii Novgorod State University, Nizhnii Novgorod
^b Lobachevsky State University of Nizhny Novgorod

Abstract: The spin light-emitting diodes based on InGaAs/GaAs heterostructures with a quantum well and an injector in the form of a (Ga,Mn)As ferromagnetic layer have been studied. It has been demonstrated that the efficiency of electron spin injection in the structure with a (Ga,Mn)As/$n^{+}$-GaAs tunneling barrier can be controlled by varying the parameters of $n^{+}$-GaAs. The spin injection control mechanisms associated with the thermal activation and tunneling of carriers have been discussed.