R. R. Reznik, K. P. Kotlyar, I. V. Ilkiv, I. P. Soshnikov, S. A. Kukushkin, A. V. Osipov, E. V. Nikitina, G. E. Cirlin, “Growth and optical properties of filamentary GaN nanocrystals grown on a hybrid SiC/Si(111) substrate by molecular beam epitaxy”, Fizika Tverdogo Tela, 2016, Volume 58, Issue 10,Pages <nobr>1886

This article is cited in 11 papers

Semiconductors

Growth and optical properties of filamentary GaN nanocrystals grown on a hybrid SiC/Si(111) substrate by molecular beam epitaxy

R. R. Reznik^abc, K. P. Kotlyar^ad, I. V. Ilkiv^ab, I. P. Soshnikov^ade, S. A. Kukushkin^acf, A. V. Osipov^afc, E. V. Nikitina^a, G. E. Cirlin^cga

^a Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg
^b Peter the Great St. Petersburg Polytechnic University
^c St. Petersburg National Research University of Information Technologies, Mechanics and Optics
^d Ioffe Institute, St. Petersburg
^e Saint Petersburg Electrotechnical University "LETI"
^f Institute of Problems of Mechanical Engineering, Russian Academy of Sciences, St. Petersburg
^g Institute for Analytical Instrumentation, Russian Academy of Sciences, St. Petersburg

Abstract: The potential to grow filamentary GaN nanocrystals by molecular beam epitaxy on a silicon substrate with a nanosized buffer layer of silicon carbide has been demonstrated. Morphological and optical properties of the obtained system have been studied. It has been shown that the intensity of the photoluminescence spectrum peak of such structures is higher than that of the best filamentary GaN nanocrystals without the buffer silicon carbide layer by a factor of more than two.

Received: 08.04.2016