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JOURNALS // Fizika Tverdogo Tela // Archive

Fizika Tverdogo Tela, 2016 Volume 58, Issue 9, Pages 1695–1700 (Mi ftt9845)

This article is cited in 5 papers

Semiconductors

Growth and properties of GaInPSbAs isoperiodic solid solutions on indium arsenide substrates

D. L. Alfimovaa, L. S. Lunina, M. L. Luninaa, A. S. Pashchenkoa, S. N. Chebotarevab

a Southern Research Center of the Russian Academy of Sciences, Rostov-on-Don
b Platov South-Russian State Polytechnic University (NPI), Novocherkassk, Rostov oblast, Russia

Abstract: The results on the growth of GaInPSbAs isoperiodic solid solutions on indium arsenide substrates from the liquid phase in a field of temperature gradient have been discussed. The heterophase equilibria in the Ga–In–P–Sb–As system have been analyzed in the framework of the regular solution model. The kinetics of the growth, the composition, the structural perfection, and the luminescence properties of Ga$_{z}$In$_{1-z}$P$_{x}$Sb$_{y}$As$_{1-x-y}$/InAs isoperiodic heterostructures have been investigated.

Received: 16.02.2016


 English version:
Physics of the Solid State, 2016, 58:9, 1751–1757

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