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JOURNALS // Fizika Tverdogo Tela // Archive

Fizika Tverdogo Tela, 2016 Volume 58, Issue 9, Pages 1806–1811 (Mi ftt9864)

This article is cited in 1 paper

Surface physics, thin films

Weak antilocalization in thin films of the Bi$_{2}$Te$_{2.7}$Se$_{0.3}$ solid solution

N. A. Abdullaeva, O. Z. Alekperova, Kh. V. Aliguliyevaa, V. N. Zverevb, A. M. Kerimovaa, N. T. Mamedova

a Institute of Physics Azerbaijan Academy of Sciences, Baku, Azerbaijan
b Institute of Solid State Physics, Russian Academy of Sciences, Chernogolovka, Moscow region

Abstract: A technology has been developed for the preparation of thin films of the Bi$_{2}$Te$_{2.7}$Se$_{0.3}$ solid solution through the thermal evaporation in a vacuum using the “hot-wall” method. The high quality of the thin films thus prepared has been confirmed by the X-ray diffraction and Raman scattering data. The electron transport has been investigated over wide ranges of temperatures (1.4–300 K) and magnetic fields (up to 8 T). It has been assumed that the observed weak antilocalization is associated with the dominant contribution from the surface states of a topological insulator. The dephasing length has been estimated.

Received: 04.08.2015
Revised: 20.03.2016


 English version:
Physics of the Solid State, 2016, 58:9, 1870–1875

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