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JOURNALS // Itogi Nauki i Tekhniki. Sovremennaya Matematika i ee Prilozheniya. Tematicheskie Obzory // Archive

Itogi Nauki i Tekhniki. Sovrem. Mat. Pril. Temat. Obz., 2019 Volume 172, Pages 104–112 (Mi into549)

This article is cited in 2 papers

Comparative analysis of the matrix method and the finite-difference method for modeling the distribution of minority charge carriers in a multilayer planar semiconductor structure

E. V. Sereginaa, V. V. Kalmanovichb, M. A. Stepovichb

a Kaluga Branch of Bauman Moscow State Technical University
b Tsiolkovsky Kaluga State University

Abstract: The stationary differential heat and mass transfer equation with discontinuous coefficients describes various non-time-dependent physical processes, for example, the distribution of minority carriers from a stationary source in an inhomogeneous or multilayer structure. In this paper, we analyze the possibilities of applying the matrix method and the finite-difference method for modeling the distribution of minority charge carriers generated by kilovolt electrons in a multilayer semiconductor material. The efficiency of the matrix method for solving stationary differential equations with discontinuous coefficients is shown.

Keywords: mathematical model, differential equation, electron beam, semiconductor, multilayer planar structure, matrix method, finite-difference method.

UDC: 517.927.2, 519.677

MSC: 34B05, 34B60, 65Z05, 80A20, 78A55

DOI: 10.36535/0233-6723-2019-172-104-112



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