Abstract:
In this paper, we discuss the possibility of using the method of integral representations (the Hankel method) for solving the nonstationary problem of heat and mass transfer in a semiconductor target. Some features of this approach to problems of heat and mass transfer in homogeneous and multilayer media are studied. We consider the example of two-dimensional diffusion of minority charge carriers generated by an electron probe. We show that a number of practical problems for multilayer targets with different layer parameters can be solved by the approach developed earlier for problems of heat and mass transfer in homogeneous semiconductor targets.
Keywords:mathematical model, differential equation of heat and mass transfer, partial derivative, Cauchy problem, electron probe, semiconductor, Hankel transform.