On the well-posedness of a model problem of heat and mass transfer in homogeneous semiconductor targets

Based on the methods of the qualitative theory of differential equations, we examine the well-posedness of the mathematical model of one-dimensional diffusion of nonequilibrium charge carriers generated by an electron beam. We prove the continuous dependence of solutions on input data and obtain estimates of the influence of errors in the initial data on the distribution of the diffusing impurity. The results obtained can be used in electron probe technologies.