Modelling of radiation conductivity by statistic particle method

The transfer of conduction electrons and valence band holes in semiconductors and dielectrics is considered. Quantum kinetic equations for conduction electron and valence band hole distribution functions in phase space of position and quasimomentum are used. The scattering integral is modeled by statistic particle method. Main types of carriers scattering are considered. Calculation of drift velocity is carried out in non-doped and doped silicon.