Numerical modelling of the semi-conductors growth by liquid phase epitaxial metxod

In the work computing experiment on the liquid phase epitaxial growth of СdyHg1-yTe and AlyGa1-yAs from solution is described. Numerical calculations of one-dimensional and two-dimensional non-linear problems are carried out by schemes with explicit approximation of one of boundary conditions and by only implicit scheme. It is shown, schemes with explicit approximation of one of the boundary conditions, sold by consecutivecalculation of required functions, are unstable in the certain range of entrance parameters. The results agreed with phisycal representations about the considered problem is obtained by only implicit scheme.