Current spectroscopy of defect states in As-Se glassy system

Results of a research of an isothermal relaxation of dark current in thin layers of the vitreous As-Se system are presented. Calculation of contact capacity $C_c$ is carried out. $C_c$ is characterized by power law dispersion and reveals exponential dependence on temperature with activation energy $E_a \sim 1.3$ эВ. Assessment of thickness of the layer corresponding to the contact capacity and electric field strength in contact area gives values for $\mathrm{As_2Se_3}$ structure $d_k = 1.24\cdot10^{-7}$ m and $E_C = 8.06\cdot10^3$ V/cm respectively. The appearance of the I-V characteristics of the Al-CSP-Al sandwich structures indicates the influence of the contact phenomena on the polarization processes and the existence of a Schottky barrier whose height is $(0.30\dots0.32)$ eV for $\mathrm{As_2Se_3}$ TI samples and $(0.35\dots0.38)$ eV for $\mathrm{As_2Se_3}$ HF samples.