Study of temperature dependence of semiconductor photoresistors

A description is given of a laboratory setup for studying the temperature dependence of the photocurrent of semiconductor photoresistors and the results of experimental measurements of the lifetime of minority carriers of a photocurrent of conductivity depending on the temperature and frequency of light irradiation waves. It is established that the temperature dependence of the lifetime of minority photocurrent carriers in the studied semiconductor photoresistors is linear when illuminated with the green spectrum light. The magnitude of the lifetime monotonously decreases with an increase in temperature up to a statistical distribution of the measured quantity. The dependence of the lifetime of minority carriers on the frequency of light waves is almost linear. The lifetime of the minority carriers of the photocurrent monotonously increases with an increase in the wavelength of the irradiated light.