Simulation of electro-optical processes in the diode, based on $N^+-SI/N-SI:ER/P^+-SI$ structure under the reverse bias and ways to improve the reliability of modeling agencies

We have developed mathematical model describing the processes that create $Er^3+$ ion electroluminescence under thr reverse bias in diods based on $n^+- Si/n-Si:Er/p^+-Si$ structure. The model considers the processes of tunneling injection of electrons from the valence band of the layer $p^+-Si$ on the deep levels associated with impurities in the active layer $Er$ $n-Si:Er$.