Features of crystallographic structure of CeO$_2$ buffer layers on $r$-Al$_2$O$_3$ obtained by pulse laser deposition method

The paper presents the results of structural studies of CeO$_2$ buffer layers grown by pulsed laser deposition on single-crystal substrates of $r$-Al$_2$O$_3$(1102) at a substrate temperature of 750$^{\circ}$C. It was shown experimentally that when the oxygen pressure changes during growth, while maintaining the remaining growth parameters unchanged, it is possible to obtain buffer layers with different crystallographic orientations: at an oxygen pressure of 0.002 mbar, the buffer layers have an orientation of (111), and at an oxygen pressure of 0.2 mbar–(002). The results obtained may be of interest for the preparation of epitaxial films and nanoheterostructures with layers of high-temperature superconductors and doped manganites on $r$-Al$_2$O$_3$ single-crystal substrates with CeO$_2$ buffer layers.