Simulation of electronic transfer spatial characteristics in flash memory elements

Based on the kinetic Monte Carlo method, a numerical simulation of electron transport in silicon short-channel floating-gate MOS transistors, which are the basic element of modern flash memory chips, is performed. This simulation is used to calculate the effect of the gate voltage on the relative value of the tunnel parasitic current that occurs on a floating gate, as well as the average energy and mobility of electrons in the conducting channel of these transistors at different drain voltages. It is shown that for the studied conditions, this effect is significant in the middle section of the conducting channel of the transistor and decreases at the source and drain junctions of the device.