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JOURNALS // Meždunarodnyj naučno-issledovatel'skij žurnal // Archive

Meždunar. nauč.-issled. žurn., 2021 Issue 8(110), Pages 19–27 (Mi irj625)

PHYSICS AND MATHEMATICS

STM parameters of semiconductor colloidal quantum dots

N. D. Zhukov, M. V. Gavrikov

NPP Volga LLC

Abstract: Based on the studies of the tunnel-emission volt-ampere characteristics of colloidal quantum dots CdSe, PbS, InSb and the single-electron transport model, the article determines the most important parameters of quantum dots such as the effective mass of the electron, the permittivity, the energy of the potential tunneling barrier, the linear size of the quantum-limited resonant electron motion (the size of the quantum dot). A comparison of the obtained parameters of quantum dots with similar ones for bulk semiconductors shows their good correspondence, which may indicate both the validity of the obtained parameters and the possibility of using models and properties of bulk semiconductors in relation to quantum dots. Based on the data obtained and with the continuation of the research, it is possible to create a method along with a software and hardware complex for industrial control of the main parameters of quantum dots.

Keywords: Materials science, semiconductor parametry, semiconductor structure, nanomaterial, nanostructure, nanoparticle, quantum dot, scanning probe microscopy, current-voltage characteristic, tunneling, tunnel emission, nanocapacitor recharge.

DOI: 10.23670/IRJ.2021.110.8.004



© Steklov Math. Inst. of RAS, 2025