Formation and study of memristor elements based on copper and titanium oxides using magnetron technology

The results of obtaining resistive memory elements on glass substrates are presented. The samples were metal/dielectric/metal structures, the active layer of which was obtained by magnetron sputtering of a composite titanium-copper target. Electron microscopic analysis showed that the active layer after the switching process has a vertically oriented morphology, which may further confirm the filamentary switching mechanism. The volt-ampere characteristics and the effect of resistive switching were studied. It is found that the proposed dielectric layer preparation method is suitable for the fabrication of memristors. In particular, it is demonstrated that the application of these films in the structure of the memristive element allows the ratio of the high electrical resistance state to the low electrical resistance state to be more than 10$^2$.