One-way conductivity of the memristive structure based on zirconium dioxide nanotubes

The anodizing technique was used to synthesize $ZrO_2$ nanotubes with an outer diameter of 25 nm. Memristors with a $Zr/ZrO_{2}/Au$ layered structure were fabricated with magnetron sputtering. Current-voltage characteristics were measured in complete cycles of resistive switching. It has been demonstrated that the structure under study has unidirectional conductance. Considering the change in the electrical resistance of fabricated memristors under an applied voltage, it was concluded that $Zr/ZrO_{2}/Au$ memristors show high synaptic plasticity.