G. V. Chucheva, M. S. Afanasiev, I. A. Anisimov, A. I. Georgieva, S. A. Levashov, A. E. Nabiyev, “Determining parameters of planar capacitors based of thin film ferroelectric materials”, Izv. Sarat. Univ. Physics, 2012, Volume 12, Issue 2,Pages <nobr>8

Physics

Determining parameters of planar capacitors based of thin film ferroelectric materials

G. V. Chucheva^a, M. S. Afanasiev^a, I. A. Anisimov^a, A. I. Georgieva^a, S. A. Levashov^a, A. E. Nabiyev^b

^a Kotelnikov Institute of Radioengineering and Electronics, Fryazino Branch, Russian Academy of Sciences
^b N. Tusi Azerbaijan State Pedagogical University

Abstract: Experimental results suggest that in the Ni/Ba$_{0.8}$Sr$_{0.2}$TiO$_3$/MgO structure with linear sizes of 150 $\times$ 150 mm can be realized by planar capacitor elements of variability over a range of capacity from 0.02 pF to 3.0 pF, which increased capacity is achieved by increasing the number of electrode sections.

Keywords: thin film ferroelectrics, planar capacitors of microscale size, microstrip lines, phase shifters, microwave devices.

UDC: 537.9

DOI: 10.18500/1817-3020-2012-12-2-8-11