Tamm resonances control in one-dimensional microwave photonic crystal for measuring parameters of heavily doped semiconductor layers

The possibility has been explored to control the photonic Tamm resonances (TRs) in the one-dimensional microwave photonic crystal (MPC) with the dielectric filling by changing the thickness of the MPCs outer layer adjacent to the heavily doped layer of the semiconductor GaAs structure. The controlled photonic TRs have been used to measure the conductivity of the heavily doped semiconductor layer. It has been shown that depending on the conductivity of the layer the specific tuning of the TR frequency is necessary in order to achieve a high sensitivity of the TR to the change of the conductivity. The possibility of observing the plasma resonance in the infrared range has additionally allowed to determine the concentration and mobility of free charge carriers in the heavily doped layer of the GaAs structure.