O. Ya. Belobrovaya, V. V. Galushka, A. L. Karagaychev, A. E. Zharkova, V. P. Polyanskaya, V. I. Sidorov, D. V. Terin, A. A. Mantsurov, “Nanostructured porous silicon layers formation at low doses of <nobr>$\gamma$</nobr>-radiation”, Izv. Sarat. Univ. Physics, 2019, Volume 19, Issue 4,Pages <nobr>312

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Brief Communications

Nanostructured porous silicon layers formation at low doses of $\gamma$-radiation

O. Ya. Belobrovaya^a, V. V. Galushka^a, A. L. Karagaychev^b, A. E. Zharkova^a, V. P. Polyanskaya^a, V. I. Sidorov^a, D. V. Terin^a, A. A. Mantsurov^a

^a Saratov State University, 83 Astrakhanskaya St., Saratov 410012, Russia
^b State Health Institution “Regional Clinical Oncology Dispensary”, Saratov 410001, Russia

Abstract: We present results of experimental study of nanoporous Si (SiNР) structure formation by using the method of metal-stimulated chemical etching upon irradiation with small doses of $\gamma$-radiation directly in the process of production (in situ). It is shown that the radiation leads to an increase of the crystallization of SiNP structures obtained on previously irradiated substrates. Apparently, this can be explained by a decrease in the initial defectiveness of the silicon substrate due to irradiation with small doses of $\gamma$-radiation.

Keywords: porous silicon, metal-stimulated chemical etching, nanostructures, X-ray diffractometry, morphology, in situ, $\gamma$-irradiation, radiation dose, microstresses, scanning electron microscope, pores, crystallite size, control, in situ.

UDC: 535.375.5:537.533.35:539.23:54-7

Language: English

DOI: 10.18500/1817-3020-2019-19-4-312-316