Influence of the electron-phonon interaction on the rate of electron-vibrational transitions of charge carriers from deeper levels from

Background. There are defect complexes formed in semiconductors and semiconductor compounds. These complexes have a quasi-molecular structure. In such structures there is a possibility of local variations by the type of alkali-halide crystals. In this case there is a strong electron-phonon interaction, which significantly alters the probability of transition. In the scientific literature these effects in most cases are not considered, which leads to discrepancy between the theoretical and experimental results. The purpose of this article is to show the important contribution of the electron-phonon interaction and demonstrate the method of evaluation thereof theoretically and experimentally. Materials and methods. The paper presents the results of quantum-mechanical calculations of the probability of electron-vibrational transition, modeling of the transition probability as a function of the shape parameter function of the electronic transition, as well as comparison of theoretical calculations with experimental results. The combination of these approaches leads to high confidence in the results. The experiment was performed in the important modern technology material - GaAs. This increases the relevance of the work. Results. It is theoretically and experimentally shown that the electron-phonon interaction increases the probability of electron transitions involving deep levels. In this paper the authors derived an expression of the probability of electron-vibrational transition. This probability is a reconciliation of the purely electronic transition with the expression of the form-function optical transition characterizing the electron-phonon interaction. It is shown that an increase in the dispersion of this feature increases the probability of transition. Conclusions. It is theoretically and experimentally shown that the electron-phonon interaction has a decisive influence on the formation of reverse currents based on gallium arsenide.