A method for determining the density of surface states in CdA/Si(p) heterostructures based on the analysis of volt-farad characteristics

The article introduces a way to define density of surface states in heterostructures on the frequency dependence of capacitance-voltage characteristics for a case when the charge of surface states depends on the applied dc bias. The author presents the results of research of heterostructure CdS/Si(p), carried out by a method of hydrochemical deposition.