On changes in the lifetimes of charge carriers during pulsed photoexcitation in silicon with deep impurity centers

The article adduces the results of numerical studies of photoconductivity kinetics in silicon with two recombination centers. It is shown that the lifetimes of charge carriers depend on the values of their equilibrium concentrations. The lifetimes increase significantly as a result of photoexcitation removal by electron emission from donor centers. This leads to the presence of electron and hole concentrations at “fast” and “slow decline” areas on the relaxation curves.