Simulation of a radiation-stimulated current source on pin structures

The simulation and research of current generation under electron irradiation in energy range 5-40 keV based on pin diodes have been implemented in the present work. The model of the cell taking into account electron-hole pair generation by means of Si atoms ionization under electron irradiation, electron diffusion in spatial charge region, drift of charge carriers under electric field in spatial charge region, and recombination has been developed. The comparison of experimental data and calculations confirms the model reliability for average energy of electron irradiation. Besides, the measurements of voltage-current characteristic of pin-diodes under influence of beta-source based on Ni-63 (with activity range 20-40mKi) have been performed.