The effect of gamma-ray irradiation on the properties of GaAs-based p-n junctions

Irradiation of samples on the basis of GaAs scale in quanta with energy 1,25 MeV, were considered. It has been revealed reduction of quantity of defects in samples with an irradiation dose 0,3 Mrad. The resulted speed recombination (RSR) model was applied for the analysis of experimental data (the RSR is the physical size which returns by life time charge carriers).