A method of measurement of elemental distribution on the depth of polycrystalline films Cu(In, Ga)Se$_2$

The results of the study are presented demonstrating the possibilities of measuring the distribution of elements in photovoltaic Cu(In, Ga)Se$_2$ films on the basis of a combination of X-ray fluorescence analysis and the "edge of the knife" method. Submicron depth resolution has been achieved, which is determined by the features of the measurement geometry, the use of polycapillary optics for ef ective focusing of radiation from an X-ray tube of power 30 W into a spot of 20-25 microns in size, and a full-field x-ray detector with a spatial resolution of 48 microns. The advantage of the proposed approach is non-destructive, while the accuracy of measuring the thickness of Cu, Ga and Se layers on a real sample was 12-14%.