S. V. Adashkevich, N. M. Lapchuk, V. F. Stel'makh, G. G. Fedoruk, E. N. Shumskaya, “Local magnetic order in silicon implanted with high-energy ions”, Pis'ma v Zh. Èksper. Teoret. Fiz., 2006, Volume 84, Issue 10,Pages <nobr>642

This article is cited in 8 papers

CONDENSED MATTER

Local magnetic order in silicon implanted with high-energy ions

S. V. Adashkevich^a, N. M. Lapchuk^a, V. F. Stel'makh^a, G. G. Fedoruk^b, E. N. Shumskaya^c

^a Belarusian State University
^b Institute of Physics, University of Szczecin, 70-451 Szczecin, Poland
^c F.C.D. Centre, Radboud University, Nijmegen, The Netherlands

Abstract: A room-temperature local magnetic order has been detected in silicon implanted with high-energy Kr⁺ and Xe⁺ ions. The evidence of the presence of the local magnetic order are the electron magnetic resonance lines with g-factor values of about 2.2 and 3.4, the hysteresis of the resonance magnetic field values of these lines, the anisotropy characteristic of ferromagnets, and the broadening. The ordering effect is retained after the annealing of samples at temperatures of no higher than 1270 K.

PACS: 61.72.-y, 75.50.Pp, 75.50.-y, 75.50.+g

Received: 26.09.2006
Revised: 12.10.2006