Abstract:
Experiments associated with direct observations of a collective state in a gas of interacting interwell excitons in GaAs/AlGaAs double quantum wells are discussed. The structures constitute Schottky photodiodes. In a metallic gate, circular windows of various sizes (diameters of 2 to 20 μm) are etched by means of electronic-beam lithography. Through these windows, the photoluminescence of interwell and intrawell excitons is excited and detected. A microscopic device allows the observation of the spatial structure of luminescence with a resolution of 1 μm through the windows of a sample placed in superfluid helium. Using optical interference filters, the spatial structure of the luminescence is analyzed selectively in the spectrum for interwell and intrawell excitons under the same experimental conditions. It is found that the photoluminescence of interwell excitons under certain conditions exhibits an axisymmetric spatial structure: along the perimeter of the windows through which the photoluminescence is observed, a regular ring pattern of equidistant bright spots of the luminescence of interwell excitons appears. This structure appears only above the photoexcitation power threshold and the number of equidistant bright spots in the ring increases with the pumping power. At high pumping powers, the structure of distinct periodic luminescence spots is smeared. At a fixed pumping power, the phenomenon exhibits explicit critical temperature dependence: the structure of regularly located luminescence spots is smeared at T > 4 K. Axisymmetric spatial configurations of equidistant luminescence spots are observed in windows of the diameters 2, 5, and 10 μm. For intrawell excitons, the spatial structure of luminescence is not observed under similar experimental conditions: the luminescence of intrawell excitons is spatially uniform in all the windows under investigation. The effect is a result of the collective behavior of interacting interwell excitons.