S. A. Teys, E. M. Trukhanov, A. S. Il'in, A. K. Gutakovskii, A. V. Kolesnikov, “Initial stages of Ge epitaxy on Si(111) under quasi-equilibrium growth conditions”, Pis'ma v Zh. Èksper. Teoret. Fiz., 2010, Volume 92, Issue 6,Pages <nobr>429

JOURNALS // Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki // Archive

Pis'ma v Zh. Èksper. Teoret. Fiz., 2010 Volume 92, Issue 6, Pages 429–437 (Mi jetpl1420)

This article is cited in 13 papers

CONDENSED MATTER

Initial stages of Ge epitaxy on Si(111) under quasi-equilibrium growth conditions

S. A. Teys, E. M. Trukhanov, A. S. Il'in, A. K. Gutakovskii, A. V. Kolesnikov

Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, Russia

Received: 04.08.2010

English version: Journal of Experimental and Theoretical Physics Letters, 2010, 92:6, 388–395

Bibliographic databases: