P. G. Baranov, I. V. Il'in, E. N. Mokhov, M. V. Muzafarova, S. B. Orlinskii, J. Shmidt, “EPR identification of the triplet ground state and photoinduced population inversion for a Si-C divacancy in silicon carbide”, Pis'ma v Zh. Èksper. Teoret. Fiz., 2005, Volume 82, Issue 7,Pages <nobr>494

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EPR identification of the triplet ground state and photoinduced population inversion for a Si-C divacancy in silicon carbide

P. G. Baranov^a, I. V. Il'in^a, E. N. Mokhov^a, M. V. Muzafarova^a, S. B. Orlinskii^b, J. Shmidt^b

^a Ioffe Physico-Technical Institute, Russian Academy of Sciences
^b Huygens Laboratory, Department of Physics, Leiden University, Leiden, The Netherlands

Abstract: It is shown that intrinsic defects responsible for the semi-insulating properties of SiC represent Si-C divacancies in a neutral state (V _Si-V _C)⁰, which have the triplet ground state. The energy level scheme and the mechanism of creating the photoinduced population inversion of the triplet sublevels of the divacancy ground state are determined. It is concluded that there is a singlet excited state through which spin polarization is accomplished, and this fact opens the possibility of detecting magnetic resonance on single divacancies.

PACS: 61.72.Ji, 61.72.Bb, 76.30.-v

Received: 17.08.2005