D. V. Gritsenko, S. S. Shaimeev, M. A. Lamin, O. P. Pchelyakov, V. A. Gritsenko, V. G. Lifshits, “Two-band conductivity of ZrO<sub>2</sub> synthesized by molecular beam epitaxy”, Pis'ma v Zh. Èksper. Teoret. Fiz., 2005, Volume 81, Issue 11,Pages <nobr>721

This article is cited in 11 papers

CONDENSED MATTER

Two-band conductivity of ZrO₂ synthesized by molecular beam epitaxy

D. V. Gritsenko^a, S. S. Shaimeev^a, M. A. Lamin^a, O. P. Pchelyakov^a, V. A. Gritsenko^a, V. G. Lifshits^b

^a A. V. Rzhanov Institute of Semiconductor Physics of SB RAS, Novosibirsk
^b Institute for Automation and Control Processes, Far Eastern Branch of the Russian Academy of Sciences, Vladivostok

Abstract: Using experiments on the injection of minority carriers from n-and p-type silicon, the contribution of electrons and holes to the conductivity of ZrO₂ in the Si/ZrO₂/Al structure is determined. It is found that electrons and holes make a contribution to the conductivity of ZrO₂, so that ZrO₂ exhibits two-band conductivity.

PACS: 77.22.Jp, 77.55.+f, 77.84.Bw

Received: 05.05.2005