Abstract:
Ballistic transport in an open small (100 nm) three-terminal quantum dot has been analyzed. The dot is based on the high-mobility 2D electron gas of the AlGaAs/GaAs heterojunction. It has been shown that the gate oscillations of the resistance of such a dot arise due to the coherent scattering of electrons on its quasidiscrete levels and these oscillations are suppressed by a weak magnetic field.