Z. D. Kvon, V. A. Tkachenko, A. E. Plotnikov, V. A. Sablikov, V. Renard, J. C. Portal, “Conductance of a multiterminal ballistic wire”, Pis'ma v Zh. Èksper. Teoret. Fiz., 2004, Volume 79, Issue 1,Pages <nobr>42

This article is cited in 4 papers

CONDENSED MATTER

Conductance of a multiterminal ballistic wire

Z. D. Kvon^a, V. A. Tkachenko^a, A. E. Plotnikov^a, V. A. Sablikov^b, V. Renard^c, J. C. Portal^c

^a Institute of Semiconductor Physics of SB RAS, Novosibirsk
^b Institute of Radioengineering and Electronics of Russian Academy of Sciences, Fryazino Department
^c Grenoble High Magnetic Fields Laboratory, MPI-FKF and CNRS, F-38042 Grenoble, France

Abstract: An experimental study of the two-, three-, and four-terminal resistance of a ballistic wire is carried out. The wire is fabricated on the basis of high-mobility 2D electron gas in an AlGaAs/GaAs heterojunction. Different behavior of mesoscopic fluctuations of multiterminal resistances is observed depending on the gate voltage and magnetic field. At $B=0.45$ T, the four-terminal resistance drops almost to zero and features resembling a ballistic conductance quantization are observed.

PACS: 73.23.Ad, 73.50.-h

Received: 20.11.2003