Magnetoresonant hardening of silicon single crystals

A microwave magnetic field crossed with a static field was found to exert a resonance effect on the dislocation mobility in single crystals of $p$-type silicon. The frequency of alternating field and the magnitude of static magnetic field corresponding to the maximal crystal hardening satisfy conditions for EPR of structural defects. This is evidence that the primary elementary processes observed previously in magnetoplasticity effects (influence of a static magnetic field on plasticity) are spin-dependent in silicon crystals. The dislocation path detected EPR spectrum was found to be anisotropic.