A. A. Pakhnevich, V. V. Bakin, A. V. Yaz'kov, G. È. Shaibler, S. V. Shevelev, O. E. Tereshchenko, A. S. Yaroshevich, A. S. Terekhov, “Energy distributions of photoelectrons emitted from <nobr>$p$</nobr>-GaN(Cs, O) with effective negative electron affinity”, Pis'ma v Zh. Èksper. Teoret. Fiz., 2004, Volume 79, Issue 10,Pages <nobr>592

This article is cited in 18 papers

CONDENSED MATTER

Energy distributions of photoelectrons emitted from $p$-GaN(Cs, O) with effective negative electron affinity

A. A. Pakhnevich^ab, V. V. Bakin^a, A. V. Yaz'kov^b, G. È. Shaibler^a, S. V. Shevelev^a, O. E. Tereshchenko^ab, A. S. Yaroshevich^a, A. S. Terekhov^ab

^a Institute of Semiconductor Physics of SB RAS, Novosibirsk
^b Novosibirsk State University

Abstract: Energy distributions of photoelectrons emitted into vacuum from the valence band and the localized states in the energy gap of $p$-GaN(Cs, O) with effective negative electron affinity were studied. It is shown that the photothermal electron excitation from the localized states lying below the Fermi level in the energy gap of $p$-GaN(Cs, O) is the dominant photoemission mechanism at the low-energy photoemission threshold.

PACS: 67.57.Lm, 76.60.-k

Received: 05.04.2004