A. V. Goran, A. A. Bykov, A. K. Bakarov, J. C. Portal, “Anisotropic positive magnetoresistance of a nonplanar 2D electron gas in a parallel pagnetic field”, Pis'ma v Zh. Èksper. Teoret. Fiz., 2004, Volume 79, Issue 10,Pages <nobr>608

This article is cited in 6 papers

CONDENSED MATTER

Anisotropic positive magnetoresistance of a nonplanar 2D electron gas in a parallel pagnetic field

A. V. Goran^a, A. A. Bykov^a, A. K. Bakarov^a, J. C. Portal^b

^a Institute of Semiconductor Physics of SB RAS, Novosibirsk
^b Grenoble High Magnetic Fields Laboratory, MPI-FKF and CNRS B.P.166, F-38042 Grenoble, France

Abstract: Magnetotransport properties of a 2D electron gas in narrow GaAs quantum wells with AlAs/GaAs superlattice barriers were studied. It is shown that the anisotropic positive magnetoresistance observed in selectively doped semiconductor structures in a parallel magnetic field is caused by the spatial modulation of the 2D electron gas.

PACS: 73.23.-b, 73.40.Gk

Received: 04.03.2004
Revised: 14.04.2004