Recombination of an electron-hole plasma in silicon under the action of femtosecond laser pulses

Experimental data are obtained on the dynamics of conduction-electron relaxation at the stage preceding the melting of a silicon surface layer. The energy of a quantum of probe radiation is smaller than the band gap, making it possible to obtain information about the electron-phonon relaxation processes for an electron concentration of $\sim10^{21}$cm$^{-3}$ in the conduction band.