Abstract:
The axio-electric effect in silicon atoms is sought for solar axions appearing owing to bremsstrahlung and the Compton process. Axions are detected using a Si(Li) detector placed in a low-background setup. As a result, a model-independent constraint on the axion-electron coupling constant $|g_{Ae}|\le 2.2\cdot10^{-10}$ has been obtained, which leads to the bounds $m_A\le7.9$ eV and $m_A\le1.4$ eV (at $90\%$ C.L.) for the mass of the axion in the DFSZ and KSVZ models, respectively.