A. A. Maksimov, S. V. Zaitsev, E. V. Filatov, A. V. Larionov, I. I. Tartakovskii, D. R. Yakovlev, A. Waag, “Formation of metastable above-barrier hole states in ZnSe/BeTe type II heterostructures under high-density optical excitation”, Pis'ma v Zh. Èksper. Teoret. Fiz., 2008, Volume 88, Issue 8,Pages <nobr>587

This article is cited in 6 papers

CONDENSED MATTER

Formation of metastable above-barrier hole states in ZnSe/BeTe type II heterostructures under high-density optical excitation

A. A. Maksimov^a, S. V. Zaitsev^a, E. V. Filatov^a, A. V. Larionov^a, I. I. Tartakovskii^a, D. R. Yakovlev^bc, A. Waag^d

^a Institute of Solid State Physics, Russian Academy of Sciences, Chernogolovka, Moscow region, 142432, Russia
^b Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021, Russia
^c Experimentelle Physik II, University of Dortmund, D-44227 Dortmund, Germany
^d Institute of Semiconductor Technology, Braunschweig Technical University, D-38106 Braunschweig, Germany

Abstract: A considerable slowing down of the luminescence kinetics of the direct optical transitions has been discovered in ZnSe/BeTe type II heterostructures under high-density optical pumping by femtosecond laser pulses. The effect is attributed to the potential barrier that appears due to the strong band bending at a high density of spatially separated photoexcited carriers and forms a metastable above-barrier hole state in the ZnSe layer. This yields a longer energy relaxation time of the holes migrating to the adjacent BeTe layer. The experimental results agree well with the numerical calculations.

PACS: 73.21.-b, 73.61.Ga, 78.67.-n

Received: 01.08.2008