Generation and removal of adatom-induced electronic states on the Cs/GaAs(001) surface

A nonmonotonic behavior of band bending φ _S as a function of cesium coverage ϑ on the Cs/GaAs(001) surface is observed in the form of several maxima and minima. This behavior indicates the formation of the quasi-discrete spectrum of the adatom-induced electronic surface states. The hysteresis of the φ _S (ϑ) dependence under adsorption and subsequent thermodesorption of cesium indicates the metastability of the Cs/GaAs(001) system.