K. A. Nasyrov, Yu. N. Novikov, V. A. Gritsenko, S. Y. Yoon, C. W. Kim, “Multiphonon ionization of deep centers in amorphous silicon nitride: Experiment and numerical simulations”, Pis'ma v Zh. Èksper. Teoret. Fiz., 2003, Volume 77, Issue 7,Pages <nobr>455

This article is cited in 11 papers

Multiphonon ionization of deep centers in amorphous silicon nitride: Experiment and numerical simulations

K. A. Nasyrov^a, Yu. N. Novikov^b, V. A. Gritsenko^a, S. Y. Yoon^c, C. W. Kim^c

^a Institute of Automation and Electrometry, Siberian Branch of Russian Academy of Sciences, Novosibirsk
^b Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
^c Samsung Advanced Institute of Technology

Abstract: The conductivity of amorphous silicon nitride has been studied experimentally in a wide range of electric fields and temperatures. The experimental results are in a quantitative agreement with the theory of multiphonon ionization of deep centers for the bipolar model of conductivity. The best agreement between experiment and the calculation has been obtained for the same parameters of deep electron and hole centers.

PACS: 77.22.Jp, 77,55.+f, 77.84.Bw

Received: 03.03.2003