On effective electron mass of silicon field structures at low electron densities

The trial wave function method developed in [10, 11] for the case of a narrow $s$ band in a perfect crystal is adapted for the calculation of the concentration dependence of the effective mass and the Landé factor in a two-dimensional electron system of low density. It has been found that the effective mass has a tendency to divergence at a certain critical concentration, whereas the $g$ factor remains finite.